Spin relaxation time, spin dephasing time and ensemble spin dephasing time in n-type GaAs quantum wells

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 365, Issue 5-6, 2007, Pages 501-504

  Lu C ^a,b   Cheng, J L ^b   Wu, M W ^a,b   da Cunha Lima, I C ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTION ELECTRONS; COULOMB SCATTERING; GAAS QUANTUM WELLS; INHOMOGENEOUS BROADENING; ISOTROPIC SYSTEMS; MICROSCOPIC KINETICS; SHORT-CORRELATION; SPIN RELAXATION TIME;

RELAXATION TIME;

EID: 34247397511     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.02.030     Document Type: Article

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