Bias stress tests of extremely high doped base HBTs

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 1997, Pages 13-17

  Henderson, Tim ^a   Hill, Darrell ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BAND STRUCTURE; EPITAXIAL GROWTH; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBSTRATES;

BIAS STRESS TESTS; GUMMEL PLOTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031370362     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)