Reliability of HTO based high-voltage gate stacks for flash memories

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 615-618

  Raskin, Yosef ^a   Salameh, Asaad ^a   Betel, David ^a   Roizin, Yakov ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION; CHARGE TRAPPING; ELECTRIC CURRENTS; GATES (TRANSISTOR); VOLTAGE MEASUREMENT;

CURRENT RELAXATION; ELECTRICAL STRESS; GATE STACKS; THERMAL OXIDES;

FLASH MEMORY;

EID: 34247368948     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.041     Document Type: Article

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