High temperature oxide (HTO) for non volatile memories applications

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 87-90

  Candelier, Ph ^a   Guillaumot, B ^b   Mondon, F ^c   Reimbold, G ^a   Achard, H ^a   Martin, F ^a  

^a CEA LETI   (France)

^b SGS Thomson Central R and D   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC DENSITY OF STATES; HIGH TEMPERATURE APPLICATIONS; INTERFACES (MATERIALS); OXIDES; TRANSISTORS; CELLULAR ARRAYS; GATES (TRANSISTOR); NITRIDES;

FLASH MEMORY CELLS; HIGH TEMPERATURE OXIDE (HTO); PERIPHERAL TRANSISTORS; OXIDE NITRIDE OXIDE (ONO); THERMAL OXIDES;

SEMICONDUCTOR STORAGE; NONVOLATILE STORAGE;

EID: 0031150224     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00021-X     Document Type: Article

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