Electronic structure of xenon implanted with low energy in amorphous silicon

Journal of Electron Spectroscopy and Related Phenomena

Volumn 156-158, Issue , 2007, Pages 409-412

  Barbieri, P F ^a   Landers, R ^a   de Oliveira Jr , M H ^a   Alvarez, F ^a   Marques, F C ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Assisted deposition; Binding energy; Relaxation; Trapping; Voids; Xenon

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRON TRAPS; ELECTRONIC STRUCTURE; ION IMPLANTATION; X RAY PHOTOELECTRON SPECTROSCOPY; XENON;

ASSISTED DEPOSITION; VOIDS;

AMORPHOUS SILICON;

EID: 34247345835     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2006.12.064     Document Type: Article

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