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Volumn 136, Issue 1, 2007, Pages 62-67

Trends and frontiers of MEMS

Author keywords

MEMS; Trends and frontiers

Indexed keywords

BIOMEDICAL EQUIPMENT; FUEL CELLS; MARKETING; OPTICAL COMMUNICATION; PRODUCT DEVELOPMENT; SILICON; TECHNOLOGY TRANSFER;

EID: 34247159421     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.02.001     Document Type: Review
Times cited : (96)

References (11)
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    • Piezoresistance effect in germanium and silicon
    • Smith C.S. Piezoresistance effect in germanium and silicon. Phys. Rev. 94 1 (1954) 42-49
    • (1954) Phys. Rev. , vol.94 , Issue.1 , pp. 42-49
    • Smith, C.S.1
  • 2
    • 34247118965 scopus 로고    scopus 로고
    • R.P. Feynman, "There's Plenty of Room at the Bottom: An Invitation to Enter a New World of Physics," a classic talk gave on December 29th 1959 at the annual meeting of the American Physical Society at the California Institute of Technology (Caltech), published in the February 1960 issue of Caltech's Engineering and Science.
  • 5
    • 0020127035 scopus 로고
    • Silicon as a mechanical material
    • Petersen K.E. Silicon as a mechanical material. Proc. IEEE 70 5 (1982) 420-457
    • (1982) Proc. IEEE , vol.70 , Issue.5 , pp. 420-457
    • Petersen, K.E.1
  • 7
    • 34247119421 scopus 로고    scopus 로고
    • Michael W. Judy, "Evolution of integrated inertial MEMS technology," Solid-State Sensor, Actuator and Microsystems Workshop Digest 0-9640024-5-0, Hilton Head Island, South Carolina, USA, June 6-10, 2004, pp. 27-32.
  • 10
    • 4143104126 scopus 로고    scopus 로고
    • Sensor networks: an overview
    • Malik T., and Sanjay M. Sensor networks: an overview. IEEE Potentials 22 2 (2003) 20-23
    • (2003) IEEE Potentials , vol.22 , Issue.2 , pp. 20-23
    • Malik, T.1    Sanjay, M.2
  • 11
    • 0142154126 scopus 로고    scopus 로고
    • Fabrication and characterization of poly (3,4-ethylenedioxy-thiophene) field effect transistors
    • Liang G., and Cui T. Fabrication and characterization of poly (3,4-ethylenedioxy-thiophene) field effect transistors. Solid State Electron. 48 1 (2004) 87-89
    • (2004) Solid State Electron. , vol.48 , Issue.1 , pp. 87-89
    • Liang, G.1    Cui, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.