MD simulation of Ar scattering from defected Si(1 0 0) at grazing incidence

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 258, Issue 1, 2007, Pages 52-56

  Gou, F ^a   Kleyn, A W ^a,b   Gleeson, M A ^b  

^a LEIDEN UNIVERSITY   (Netherlands)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

Ion scattering; Molecular dynamics

Indexed keywords

ANGULAR DISTRIBUTION; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRON SCATTERING; MOLECULAR DYNAMICS; SILICON;

ENERGY DISTRIBUTIONS; ION SCATTERING; SURFACE CHANNELING;

ARGON;

EID: 34147205518     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.089     Document Type: Article

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