Two levels of the Schottky barrier in CVD diamond/silicon heterojunctions at low temperature

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 1029-1032

  Rodrigues, A M ^a  

^a UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

Devices; Diamond film; Electrical properties; Field emission; Schottky diodes

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; ELECTRIC CONDUCTANCE; FIELD EMISSION; HETEROJUNCTIONS; SEMICONDUCTING SILICON;

EQUIVALENT CIRCUIT MODELS; FORWARD CURRENT; THERMIONIC CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 34047269258     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.061     Document Type: Article

References (5)

1. Wang W.N. Proc. 4th NIRIM International Symposium on Advanced Materials (1997) 53
2. Rodrigues A.M., Gomes H.L., Stallinga P., Pereira L., and Pereira E. Diamond Relat. Mater. 10 (2001) 858
3. Defives D., Noblanc O., Dua C., Brylinski C., Barthula M., Fortuna V.A., and Meyer F. IEEE Trans. Electron Devices 46 (1999) 449
4. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts. second ed. (1988), Clarendon Press, Oxford
5. Tung R.T. Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. 35 (2001) 1