Preparation and characterization of As2S3 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method

Materials Research Bulletin

Volumn 35, Issue 8, 2000, Pages 1345-1353

  Sartale, S D ^a   Lokhande, C D ^a  

^a SHIVAJI UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARSENIC COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS; LIGHT ABSORPTION; OPTICAL PROPERTIES; SILICON WAFERS; SODIUM COMPOUNDS; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; THIN FILMS;

ARSENIC TRISULFIDE;

SEMICONDUCTING FILMS;

EID: 0034200034     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(00)00330-5     Document Type: Article

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