Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

Infrared Physics and Technology

Volumn 50, Issue 2-3, 2007, Pages 194-198

  Weerasekara, A B ^a   Rinzan, M B M ^a   Matsik, S G ^a   Perera, A G U ^a   Buchanan, M ^b   Liu, H C ^b   von Winckel, G ^c   Stintz, A ^c   Krishna, S ^c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DOPING (ADDITIVES); NATURAL FREQUENCIES; PHOTOEMISSION; SILICON COMPOUNDS; SPECTRUM ANALYSIS;

BROAD SPECTRAL RESPONSE; HETEROJUNCTION INTERFACIAL WORK FUNCTION INTERNAL PHOTOEMISSION (HEIWIP); TERAHERTZ DETECTORS; THRESHOLD FREQUENCY;

PHOTODETECTORS;

EID: 34047167451     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.10.019     Document Type: Article

References (8)

1. Esaev D.G., Rinzan M.B.M., Matsik S.G., and Perera A.G.U. J. Appl. Phys. 96 (2004) 4588
2. Matsik S.G., Rinzan M.B.M., Perera A.G.U., Liu H.C., Wasilewski Z.R., and Buchanan M. Appl. Phys. Lett. 82 (2003) 139
3. Rinzan M.B.M., Perera A.G.U., Matsik S.G., Liu H.C., Buchanan M., von Winckel G., Stintz A., and Krishna S. Infrared Phys. Technol. 47 (2005) 188
4. Rinzan M.B.M., Perera A.G.U., Matsik S.G., Liu H.C., Wasilewski Z.R., and Buchanan M. Appl. Phys. Lett. 86 (2005) 071112
5. Yao H., and Compaan A. Appl. Phys. Lett. 57 (1990) 147
6. Perera A.G.U., Yuan H.X., and Francombe M.H. J. Appl. Phys. 77 (1995) 915
7. Williams R. In: Willardson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals vol. 6 (1970), Academic Press
8. Mooney J.M., and Silverman J. IEEE Trans. Electron Dev. 32 (1985) 33