Temperature effect on impurity-bound polaronic energy levels in a GaAs parabolic quantum dot

Physica B: Condensed Matter

Volumn 393, Issue 1-2, 2007, Pages 213-216

  Chen, Shi Hua ^a   Xiao, Jing Lin ^b  

^a Huzhou Vocational Technology College   (China)

^b INNER MONGOLIA UNIVERSITY FOR NATIONALITIES   (China)

Author keywords

Binding energy; Polaron; Quantum dot

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; EXCITED STATES; GROUND STATE; PERTURBATION TECHNIQUES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

POLARONIC ENERGY LEVELS; RAYLEIGH SCHRODINGER PERTURBATION THEORY;

POLARONS;

EID: 34047119365     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.01.004     Document Type: Article

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