A new robust power MOSFET family in the voltage range 80 V-150 v with superior low RDSon, excellent switching properties and improved body diode

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Schlögl, Andreas ^a   Rösch, Maximilian ^a   Hirler, Franz ^b   Soufi Amlashi, Negar ^a   Ropohl, Jan ^b   Siemieniec, Ralf ^a   Hiller, Uli ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Device characterization; Free wheeling diode; Industrial application; MOSFET; Power semiconductor device

Indexed keywords

DEVICE CHARACTERIZATION; FREE WHEELING DIODE; GATE RESISTANCE; POWER SEMICONDUCTOR DEVICES; VOLTAGE OVERSHOOTS;

DC-DC CONVERTERS; DIODES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); SWITCHING NETWORKS;

MOSFET DEVICES;

EID: 33947701476     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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