A study of oxygen reduction of tin- or zinc-doped indium oxide (ITO or IZO) film induced by deposition of silicon nitride film in PECVD process

Materials Research Society Symposium Proceedings

Volumn 936, Issue , 2006, Pages 25-30

  Kim, Byoung June ^a   Choi, Youn Mo ^a   Girotra, Kunal ^a   Yang, Sung Hoon ^a   Kim, Shi Yul ^a   Lim, Soon Kwon ^a   Souk, Jun Hyung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); INDIUM COMPOUNDS; OPACITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TIN; ZINC;

ATOMIC COMPOSITION; CRITICAL TEMPERATURE; OXYGEN REDUCTION;

THIN FILMS;

EID: 33947628304     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0936-l05-08     Document Type: Conference Paper

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