Wafer redeposition impact on etch rate uniformity in IPVD system

IEEE Transactions on Plasma Science

Volumn 35, Issue 1, 2007, Pages 74-82

  Brcka, Jozef ^a   Robison, Rodney L ^a  

^a TEL TECHNOLOGY CENTER   (United States)

Author keywords

Argon; Copper; Diffusion; Experiment; Ionized physical vapor deposition (IPVD); Material processing applications in plasma; Redeposition (RD); Simulation; Thermalization

Indexed keywords

CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRODES; IONIZATION; PLASMA COLLISION PROCESSES; PLASMA ETCHING; PRESSURE EFFECTS; WAFER BONDING;

IONIZED PHYSICAL VAPOR DEPOSITION; MEAN FREE PATH; THERMALIZATION; WAFER REDEPOSITION;

PHYSICAL VAPOR DEPOSITION;

EID: 33947411434     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2006.889294     Document Type: Article

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