EXAFS analysis of the local structure of GexSi1-x thin film alloys

AIP Conference Proceedings

Volumn 882, Issue , 2007, Pages 566-568

  Sung, Narkeon ^a   Yoo, Yong Goo ^b   Yang, Dong Seok ^c  

^a POSTECH   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Chungbuk National University   (South Korea)

Author keywords

Ge Si; Local structure; XAFS

Indexed keywords

EID: 33947360670     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2644594     Document Type: Conference Paper

References (6)

1. S.-Y. Lee, C. W. Park, Solid-state Electronic 50 333-339 (2006).
2. A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake, Y. Shiraki, Appl. Phys. Lett. 80, 3, 488-490 (2002).
3. I. Yonenaga, M. Sakurai, M.H.F. Sluiter, Y. Kawazoe, Appl. Surf. Sci. 224 193-196 (2004).
4. D. E. Sayers, E. A. Stern, and F. W. Lytle, Phys. Rev. Lett. 27 1204 (1971).
5. D.C. Koningsberger and R. Prins, X-ray absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES, Wiley Interscience, New York, 1988.
6. D.-S. Yang and J. M. Lee, Physica Scripta T115 200-201 (2005).