Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 751-754

  Huang, Shesong ^a   Niu, Zhichuan ^a   Ni, Haiqiao ^a   Xiong, Yonghua ^a   Zhan, Feng ^a   Fang, Zhidan ^a   Xia, Jianbai ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Long wavelength; A1. Low density; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

CAPPING LAYERS; LONG WAVELENGTH; LOW DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947311345     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.299     Document Type: Article

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