High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 1005-1008

  Wu, Bing Ruey ^a   Snodgrass, William ^b   Feng, Milton ^b   Cheng, K Y ^b  

^a AGILENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting indium phosphide; B3. Bipolar transistors; B3. Heterojunction semiconductor devices

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SHEET RESISTANCE;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); HETEROJUNCTION SEMICONDUCTOR DEVICES; OSCILLATION FREQUENCY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33947310730     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.143     Document Type: Article

References (8)

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