Lateral self-arrangement of self-assembled InAs quantum dots by an intentional-induced dislocation network

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 759-761

  Welsch, H ^a   Kipp, T ^a   Heyn, Ch ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III V material

Indexed keywords

BUFFER LAYERS; DISLOCATIONS (CRYSTALS); INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

MISFIT DISLOCATION LINES; MISFIT DISLOCATION NETWORK (MDN); PHOTOLUMINESCENCE MEASUREMENTS; SEMICONDUCTING III-V MATERIAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947309046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.121     Document Type: Article

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