Transport and STM measurements of HCI modified materials

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 256, Issue 1, 2007, Pages 319-323

  Pomeroy, J M ^a   Grube, H ^a   Perrella, A C ^a,b,c   Sosolik, C E ^d   Gillaspy, J D ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b School of Chemical and Molecular Engineering   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d CLEMSON UNIVERSITY   (United States)

Author keywords

EBIT; Gold; Highly charged ions; Magnetic tunnel junction; Mica; Nano feature; Scanning tunnelling microscopy; Tungsten

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ABSORPTION; ELECTRONIC STRUCTURE; GOLD; MICA; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; THIN FILMS; TUNGSTEN; TUNNEL JUNCTIONS;

ELECTRON BEAM ION TRAP (EBIT); HCI SURFACE NEUTRALIZATION; HIGHLY CHARGED IOS (HCI);

IONS;

EID: 33947167190     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.019     Document Type: Article

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