Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4941-4944

  Kanno, S ^a   Miya, G ^a   Tanaka, J ^a   Masuda, T ^a   Kuwahara, K ^b   Sakaguchi, M ^b   Makino, A ^b   Tsubone, T ^b   Fujii, T ^b  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

CD prediction model; Reaction product; Uniformity; Wafer temperature

Indexed keywords

MATHEMATICAL MODELS; PLASMA ETCHING; PREDICTIVE CONTROL SYSTEMS; TEMPERATURE DISTRIBUTION; WAFER BONDING;

CRITICAL DIMENSION (CD); PREDICTION MODELS; REACTION PRODUCTS; WAFER TEMPERATURES;

GATES (TRANSISTOR);

EID: 33947124122     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.101     Document Type: Article

References (9)

1. International Technology Roadmap for Semiconductors 2004 Update, (2004) 23.
2. Itabashi N., Mori M., Kofuji N., Kojima M., Fujii T., Makino A., Yoshigai M., Ishimura H., Tsujimoto K., and Tachi S. Proceedings of the Dry Process Symposium (1999) 115
3. Izawa M., Tachi S., Hamasaki R., Yoshida T., and Kojima M. Proceedings of the Dry Process Symposium (1997) 45
4. Tachi S. J. Vac. Sci. Technol., A 21 (2003) 131
5. Wright D.R., Hartman D.C., Sridharan U.C., Kent M., Jasinski T., and Kang S. J. Vac. Sci. Technol., A 10 (1992) 1070
6. Meyer J.A., Kirmse K.H.R., Jenq J.-S., Perez-Montero S.Y., Maynard H.L., Wendt A.E., Taylor J.W., and Hershkowitz N. Appl. Phys. Lett. 64 (1994) 1926
7. Shan H., Pu B.Y., Gao H., Ke K., Lewis J., Welch M., and Deshpandey C. J. Vac. Sci. Technol. B14 (1996) 521
8. Daviet J.F., Peccoud L., and Mondon F. J. Electrochem. Soc. 140 (1993) 3245
9. Detter X., Palla R., Thomas-Boutherin I., Pargon E., Cunge G., Joubert O., and Vallier L. J. Vac. Sci. Technol., B 21 (2003) 2174