Effect of SiO2 Capping Layer on a Laser Crystallization of a-Si Thin Film

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 711-716

  Kang, Myung Koo ^a   Kim, Hyun Jae ^a   Kang, Sook Young ^a   Lee, Su Kyung ^a   Kim, Chi Woo ^a   Chung, Kyuha ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEHYDROGENATION; DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; GLASS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LASER BEAMS; PASSIVATION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICA; SOLIDIFICATION; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYERS; CRITICAL ENERGY DENSITY;

THIN FILMS;

EID: 1642581685     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a17.3     Document Type: Conference Paper

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