Response to "comment on 'Nitridation effects on Pb center structures at SiO2/Si(100) interfaces' " [J. Appl. Phys. 95, 4096 (2004)]

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Miura, Yoshinao ^a   Fujieda, Shinji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847738965     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2422870     Document Type: Note

References (6)

1. Y. Miura and S. Fujieda, J. Appl. Phys. 95, 4096 (2004).
2. A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 101, 026106 (2007). preceding paper.
3. P. M. Lenahan and S. E. Curry, Appl. Phys. Lett. 0003-6951 10.1063/1.103278 56, 157 (1990); W. L. Warren, E. H. Poindexter, M. Offenberg, and W. Muller-Warmuth, J. Electrochem. Soc. 139, 872 (1992).
4. P. M. Lenahan and S. E. Curry, Appl. Phys. Lett. 0003-6951 10.1063/1.103278 56, 157 (1990); W. L. Warren, E. H. Poindexter, M. Offenberg, and W. Muller-Warmuth, J. Electrochem. Soc. 139, 872 (1992).
5. L. G. Gosset, J. J. Ganem, H. J. von Bardeleben, S. Rigo, I. Trimaille, J. L. Cantin, T. Akermark, and I. C. Vickridge, J. Appl. Phys. 85, 3661 (1999).
6. K. K. Abdelghafar, K. Watanabe, T. Kikawa, and Y. Kamigaki, J. Appl. Phys. 92, 2475 (2002).