High performance nMOSFET with HfSix/HfO2 gate stack by low temperature process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 890-893

  Hirano, T ^a   Ando, T ^a   Tai, K ^a   Yamaguchi, S ^a   Kato, T ^a   Hiyama, S ^a   Hagimoto, Y ^a   Takesako, S ^a   Yamagishi, N ^a   Watanabe, K ^a   Yamamoto, R ^a   Kanda, S ^a   Terauchi, S ^a   Tateshita, Y ^a   Tagawa, Y ^a   Iwamoto, H ^a   Saito, M ^a   Kadomura, S ^a   Nagashima, N ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LOW TEMPERATURE OPERATIONS; NITRIDATION; PERMITTIVITY;

DRIVE CURRENT; GATE STACKS; HIGH-K FABRICATION; PLASMA NITRIDATION;

MOSFET DEVICES;

EID: 33847695728     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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