Electronic properties of GaN films grown on TiC substrates

Electrochemical and Solid-State Letters

Volumn 10, Issue 2, 2007, Pages

  Freitas, Jaime A ^a   Rowland, Larry B ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; FILM GROWTH; PHOTOLUMINESCENCE; TITANIUM CARBIDE; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT;

DONOR CONCENTRATION; FILM SURFACE; ORGANOMETALLIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE MEASUREMENT;

GALLIUM NITRIDE;

EID: 33845950245     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2402984     Document Type: Article

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