Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

ECS Transactions

Volumn 4, Issue 1, 2007, Pages 393-399

  Popadic M ^a   Sarubbi, F ^a   Scholtes, T L M ^a   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); EPITAXIAL GROWTH; PARTIAL PRESSURE; SILICON; SURFACE SEGREGATION;

ARSINE PARTIAL PRESSURE; CONTROLLABLE DOPING;

CHEMICAL VAPOR DEPOSITION;

EID: 33847656073     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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