Functional IC analysis through chip backside with nano scale resolution - E-beam probing in FIB trenches to STI level

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 2006, Issue , 2006, Pages 376-381

  Schlangen, R ^a   Leihkauf, R ^a   Kerst, U ^a   Bolt, C ^a   Kruger S ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FOCUSED ION BEAMS; INFRARED RADIATION; OPTICAL RESOLVING POWER; SEMICONDUCTOR DEVICES;

CHIP BACKSIDE; DYNAMIC PROBING; INFRARED (IR) LIGHT;

INTEGRATED CIRCUITS;

EID: 33847637090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C. Shawn, C.C. Tsao and T.R. Lundquist, US Patent 6,872,581 B2
2. R. Schlangen, U. Kerst, A. Kabakow, C. Boit, "Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations," Proc. 16th ESREF (2005) 1544
3. C. Boit, U. Kerst, R. Schlangen, A. Kabakow, E. Le Roy, T.R. Lundquist, S. Pauthner, "Impact of Backside Circuit Edit on Active Device Performance in Bulk Silicon ICs" Proc. 37th ITC (2005) 48.2
4. M.A. Thompson, C. Richardson, E. Le Roy, T. Lundquist and W.B. Thompson, "Coaxial, Photon-Ion Technology Enables Direct Navigation to Buried Nodes on Planarized Surfaces, Including Silicon" Proc. 28th ISTFA (2002) 409
5. rd Edition ( 1993) 163