Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver

Optics Letters

Volumn 32, Issue 5, 2007, Pages 500-502

  Shin, Jonghyun ^a   Bhattacharya, Pallab ^a   Yuan, Hao Chih ^b   Ma, Zhenqiang ^b   Váró, György ^c  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

BACTERIORHODOPSIN; BIASING CIRCUIT; GATE ELECTRODES; PHOTORECEIVERS;

DEPOSITION; ELECTROPHORESIS; INTEGRATED OPTICS; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; OPTICAL GAIN;

OPTICAL RECEIVERS;

BACTERIORHODOPSIN; OXIDE; SILICON; TIN DERIVATIVE; TIN DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; HALOBACTERIUM SALINARUM; INSTRUMENTATION; LIGHT; METABOLISM; METHODOLOGY; OPTICS; PHOTOCHEMISTRY; SEMICONDUCTOR;

BACTERIORHODOPSINS; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; HALOBACTERIUM SALINARUM; LIGHT; OPTICS; OXIDES; PHOTOCHEMISTRY; SILICON; TIN COMPOUNDS; TRANSISTORS;

EID: 33847629329     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.32.000500     Document Type: Article

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