메뉴 건너뛰기




Volumn 9, Issue 5, 1997, Pages 663-665

A silicon NMOS monolithically integrated optical receiver

Author keywords

Optical receivers; Photodiodes

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; BIT ERROR RATE; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; FREQUENCY RESPONSE; MONOLITHIC INTEGRATED CIRCUITS; MOS DEVICES; MOSFET DEVICES; PHOTODIODES; SEMICONDUCTING SILICON; SIGNAL RECEIVERS;

EID: 0031147103     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588191     Document Type: Article
Times cited : (26)

References (8)
  • 2
    • 0021635766 scopus 로고
    • Gigaherz transresistance amplifiers in fine line NMOS
    • A. A. Abidi, "Gigaherz transresistance amplifiers in fine line NMOS," IEEE J. Solid-State Circuits, vol. SC-19, pp. 986-995, 1984.
    • (1984) IEEE J. Solid-State Circuits , vol.SC-19 , pp. 986-995
    • Abidi, A.A.1
  • 5
    • 0028430939 scopus 로고
    • Elimination or minimization of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si
    • M.-J. Zhou, J. Holleman, and H. Wallinga, "Elimination or minimization of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si," Electron. Lett., vol. 30, pp. 895-897, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 895-897
    • Zhou, M.-J.1    Holleman, J.2    Wallinga, H.3
  • 6
    • 0030195702 scopus 로고    scopus 로고
    • High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure
    • J. Y. L. Ho and K. S. Wong, "High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure," Appl. Phys. Lett., vol. 69, pp. 16-18, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 16-18
    • Ho, J.Y.L.1    Wong, K.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.