Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver

Optics Letters

Volumn 29, Issue 19, 2004, Pages 2264-2266

  Shin, Jonghyun ^a   Bhattacharya, Pallab ^a   Xu, Jian ^b   Váró, György ^c  

^a UNIVERSITY OF MICHIGAN   (United States)

^b The Pennsylvania State University   (United States)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

BACTERIORHODOPSIN; PHOTOTRANSCEIVERS; PHOTOVOLTAGE;

DOPING (ADDITIVES); ELECTRODEPOSITION; ELECTROPHORESIS; ETCHING; LIGHT; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PROTEINS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

TRANSCEIVERS;

ALUMINUM DERIVATIVE; BACTERIORHODOPSIN; GALLIUM; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

AMPLIFIER; ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; GENETIC PROCEDURES; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; PHYSIOLOGY; RADIATION EXPOSURE; RADIATION RESPONSE; SEMICONDUCTOR; SYSTEM ANALYSIS;

ALUMINUM COMPOUNDS; AMPLIFIERS; ARSENICALS; BACTERIORHODOPSINS; BIOSENSING TECHNIQUES; DOSE-RESPONSE RELATIONSHIP, RADIATION; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; NANOTECHNOLOGY; PHOTOCHEMISTRY; SYSTEMS INTEGRATION; TRANSISTORS;

EID: 6444233462     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.29.002264     Document Type: Article

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