Fabrication of exchange-biased epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages 1897-1899

  Ishikawa, T ^a   Marukame, T ^a   Hakamata, S ^a   Matsuda, K i ^a   Uemura, T ^a   Yamamoto, M ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Exchange bias; Half metallic ferromagnets; Heusler alloys; Magnetic tunnel junctions; MgO tunnel barrier

Indexed keywords

COBALT ALLOYS; ELECTRIC POTENTIAL; ELECTRODES; MAGNESIA; MAGNETIC MATERIALS; MAGNETORESISTANCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THIN FILMS;

EXCHANGE BIAS; HEUSLER ALLOYS; MAGNETIC TUNNEL JUNCTIONS; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33847628767     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.684     Document Type: Article

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