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Volumn 90, Issue 9, 2007, Pages
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High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots
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Author keywords
[No Author keywords available]
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Indexed keywords
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
LINEWIDTH;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
SEMICONDUCTING INDIUM COMPOUNDS;
THERMODYNAMIC STABILITY;
ENHANCED INTEGRATED PHOTOLUMINESCENCE (PL) INTENSITY;
INDUCED ENERGY SHIFT;
PHOSPHOROUS ION IMPLANTATION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 33847624257
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2710006 Document Type: Article |
Times cited : (12)
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References (10)
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