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Volumn 90, Issue 9, 2007, Pages

High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LINEWIDTH; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY;

EID: 33847624257     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2710006     Document Type: Article
Times cited : (12)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.