SAF exhibits better resistance to roughness edge than single-free layer

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages 2671-2673

  Lee, Y J ^a   Zhu, J G ^b   Kao, M J ^a   Wang, Y H ^a   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Magnetic tunnel junction; Magnetization reversal; Micromagnetism; MRAM

Indexed keywords

COMPUTER SIMULATION; MAGNETIC FLUX; MAGNETIZATION REVERSAL; SEMICONDUCTOR JUNCTIONS; SURFACE RESISTANCE; SWITCHING;

KINK FREE SWITCHING; LANDAU LIFSHIZE GILBERT EQUATION; MAGNETIC TUNNEL JUNCTION; MICROMAGNETISM;

SPIN DYNAMICS;

EID: 33847607386     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.1101     Document Type: Article

References (7)

1. Sousa R.C., Zhang Z., and Freitas P.P. J. Appl. Phys. 91 (2002) 7700
2. Inomata K., Koike N., Nozaki T., Abe S., and Tezuka N. Appl. Phys. Lett. 82 (2003) 2667
3. Shi J., Zhu T., Durlam M., Chen E., Tehrani S., Zheng Y.F., and Zhu J.G. IEEE Trans. Magn. 34 (1998) 997
4. Nozaki T., Jiang Y., Sukegawa H., Tezuka N., Hirohata A., Inomata K., and Sugimoto S. J. Appl. Phys. 95 (2004) 3745
5. Inomata K., Nozaki T., Tezuka N., and Sugimoto S. Appl. Phys. Lett. 81 (2002) 310
6. Tezuka N., Kitagawa E., Inomata K., Sugimoto S., Kikuchi N., and Shimada Y. J. Magn. Magn. Mater. 240 (2002) 294
7. Wang Y.H., Chen W.C., Chen Y.H., Shen K.H., Lee Y.J., Hung C.C., Chen C.M., Hsu H.H., Chen W.S., Liou D.C., Kao M.J., Wang L.C., Lai C.H., Lin W.C., Tang D.D., and Tsai M.J. J. Appl. Phys. 97 (2005) 10C923