Plasma-assisted molecular beam epitaxial growth of AlN films on vicinal sapphire (0001) substrates

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1553-1556

  Shen, X Q ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AlN; Rf MBE; Step bunching; Steps; Vicinal sapphire (0001) substrate

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SUBSTRATES; SURFACES;

NITRIDE FILMS; RF-MBE; STEP-BUNCHING; VICINAL SAPPHIRE;

METALLIC FILMS;

EID: 8644285531     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1553     Document Type: Conference Paper

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