Atomic core configurations of the over(a, ⇒)-screw basal dislocation in wurtzite GaN

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 212-216

  Belabbas, I ^a,b   Nouet, G ^a   Komninou, Ph ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

A1. Line defects; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

GALLIUM NITRIDE; PHASE TRANSITIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS;

HYBRIDIZATION; LINE DEFECTS; SEMICONDUCTING III-V MATERIALS;

DISLOCATIONS (CRYSTALS);

EID: 33847251487     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.022     Document Type: Article

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