Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 641-644

  Wiegner, D ^a   Merk, T ^a   Seyfried, U ^a   Templ, W ^a   Merk, S ^a   Quay, R ^b   Van Raay, F ^b   Walcher, H ^b   Massler, H ^b   Seelmann Eggebert, M ^b   Reiner, R ^b   Moritz, R ^b   Kiefer, R ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CODE DIVISION MULTIPLE ACCESS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; NATURAL FREQUENCIES; POWER AMPLIFIERS;

HIGH BANDWIDTH; MEDIUM RANGE MULTIBAND BASE STATIONS; MULTISTAGE BROADBAND AMPLIFIERS; OUTPUT POWER;

BROADBAND AMPLIFIERS;

EID: 33847233936     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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