Atomistic study of the pressure-induced phase-transition mechanism in GaAs by Möbius inversion potentials

Journal of Physics and Chemistry of Solids

Volumn 68, Issue 3, 2007, Pages 445-457

  Cai, Jin ^a   Chen, Nanxian ^a,b   Wang, Huaiyu ^a,c  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^c CCAST WORLD LABORATORY   (China)

Author keywords

A. Semiconductors; D. Crystal structure; D. Phase transitions

Indexed keywords

ACTIVATION ENERGY; ATOMIC PHYSICS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ENTHALPY; PHASE TRANSITIONS; SEMICONDUCTOR MATERIALS;

MOBIUS INVERSION POTENTIALS; ROCKSALT; TRANSITION PATHS; ZINCBLENDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33847139103     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2006.12.023     Document Type: Article

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