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Volumn 66, Issue 6, 2002, Pages 641071-641079

Changes of the geometry and band structure of SiC along the orthorhombic high-pressure transition path between the zinc-blende and rocksalt structures

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE; ZINC SULFIDE;

EID: 0036696537     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.064107     Document Type: Article
Times cited : (44)

References (21)
  • 12
    • 0028743086 scopus 로고
    • edited by C. H. Carter, Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, MRS Symposia Proceedings (Materials Research Society, Pittsburgh)
    • W. R. L. Lambrecht, in Diamond, SiC, and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, MRS Symposia Proceedings No. 339 (Materials Research Society, Pittsburgh, 1994), pp. 565-582.
    • (1994) Diamond, SiC, and Nitride Wide Bandgap Semiconductors , vol.339 , pp. 565-582
    • Lambrecht, W.R.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.