Multiple lattice inversion approach to interatomic potentials for compound semiconductors

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 7, 2005, Pages 1256-1263

  Cai, Jin ^a   Hu, Xiaoyan ^b   Chen, Nanxian ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

A. Semiconductors; D. Crystal structure; D. Lattice dynamics; D. Mechanical properties

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; INTERMETALLICS; MECHANICAL PROPERTIES; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE;

ATOMISTIC SIMULATIONS; BINARY SEMICONDUCTORS; INTERATOMIC POTENTIALS; IONIC EFFECTS;

SEMICONDUCTOR MATERIALS;

EID: 23844432263     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.04.006     Document Type: Conference Paper

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