Photo oxidation and PECVD stacked gate insulator for poly-Si TFTs at 200-300°C

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 120-123

  Nakata, Y ^a,b   Okamoto, T ^a   Hamada, T ^a   Itoga, T ^a   Ishii, Y ^a  

^a SHARP CORPORATION   (Japan)

^b Advanced LCD Tech Dev Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

POLYCRYSTALLINE MATERIALS; RECONFIGURABLE HARDWARE; SILICON;

GATE INSULATOR; INTERFACE TRAP DENSITY; PHOTO-OXIDE; POLY-SI TFTS; STACKED FILM; STACKED GATE; XE EXCIMER LAMP;

INTERFACES (MATERIALS);

EID: 84954103572     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967560     Document Type: Conference Paper

References (4)

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3. M. Hirayama et al., IEDM Tech. Dig., (1999) 249.
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