Silicon carbide JFET cascode switch for power conditioning applications

2005 IEEE Vehicle Power and Propulsion Conference, VPPC

Volumn 2005, Issue , 2005, Pages 574-581

  McNutt, Ty ^a   Veliadis, Victor ^a   Stewart, Eric ^a   Hearne, Harold ^a   Reichl, John ^a   Oda, Peter ^a   Van Campen, Stephen ^a   Ostop, John ^a   Clarke, R Chris ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; SILICON CARBIDE; SWITCHING CIRCUITS;

POWER DIODES; REVERSE BIAS SAFE OPERATING AREA (RBSOA); SWITCHING MEASUREMENTS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33847066722     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VPPC.2005.1554617     Document Type: Conference Paper

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