Composition control of TaSixNy thin films by chemical vapor deposition for future n-MOSFET metal gate electrode

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 333-340

  Sugita, Yoshihiro ^a   Aoyama, Takayuki ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRODES; MOSFET DEVICES; TANTALUM COMPOUNDS;

HFSION GATE DIELECTRIC; METAL GATE ELECTRODE; WORKFUNCTION;

THIN FILMS;

EID: 33846985655     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355724     Document Type: Conference Paper

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