Ge precursors for strained Si and compound semiconductors

Semiconductor International

Volumn 29, Issue 4, 2006, Pages 39-40

  Woelk, Egbert ^a   Shenai, Deo ^a   Stored, Peter ^b   Sagnes, Isabelle ^c  

^a ROHM AND HAAS COMPANY   (United States)

^b SILTRONIC AG   (Germany)

^c UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846151759     PISSN: 01633767     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (2)

1. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie and A. Lochtefeld, "Strained Si, SiGe, and Ge Channels for High Mobility Metal- OxideSemiconductor Field-Effect Transistors," J. Appl. Phys., 2005, Vol.97, No.1.
2. Y. Chriqui et al., "Direct Growth of GaAs Based Structures on Exactly (001)-Oriented, Ge/Si Virtual Substrates: Reduction of the Structural Defect Density and Observation of Electroluminescence at Room Temperature Under CW Electrical Injection," J. Cryst. Growth, 2004, Vol. 265, No. 1, p. 53.