Prospects for complementary SiGeC BiCMOS on thin-film SOI

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 355-363

  Chantre, A ^a   Averrier, G ^a   Boissonnet, L ^a   Borot, G ^a   Bouillon, P ^a   Brossard, F ^a   Chevalier, P ^a   Deleglise F ^a   Dutartre, D ^a   Duvernay, J ^a   Fregonese S ^b   Judong, F ^a   Pantel, R ^a   Perrotin, A ^a   Rauber, B ^a   Rubaldo, L ^a   Saguin, F ^a   Schwartzmann, T ^a   Vandelle, B ^a   Zimmer, T ^b  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS;

ELECTRICAL CHARACTERISTICS; SELF ALIGNMENT;

CMOS INTEGRATED CIRCUITS;

EID: 33846967833     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355833     Document Type: Conference Paper

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