Interface Defect Formation in MOSFETs by Atomic Hydrogen Exposure

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1844-1853

  Stahlbush, R E ^a   Cartier, E ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); HYDROGEN; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; OXIDES; PLASMA APPLICATIONS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS;

ATOMIC HYDROGEN; GATE OXIDE; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 0028697654     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340516     Document Type: Article

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