Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: The influence of strong impurity and defect scattering

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1580-1583

  Martinez, C E ^a   Stanton, N M ^a   Kent, A J ^a   Williams, M L ^a   Harrison, I ^a   Tang, H ^b   Webb, J B ^b   Bardwell, J A ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRONS; GALLIUM NITRIDE; RELAXATION PROCESSES; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DEFECT SCATTERING; ENERGY LOSS RATE; ENERGY RELAXATION;

HETEROJUNCTIONS;

EID: 33846890883     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/013     Document Type: Article

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