Electron-phonon interaction in a very low mobility-doped gated quantum well

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 3, 2000, Pages 2028-2033

  Fletcher, R ^a   Feng, Y ^b  

^a QUEEN S UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000498497     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.2028     Document Type: Article

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