Study on the micro-infrared radiation of CMOS devices and defects

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

Volumn 26, Issue 4, 2006, Pages 460-465

  Chen, Zhaoyi ^a   Fang, Peiyuan ^a   Wang, Jiaji ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

CMOS; Infrared radiation; Reliability

Indexed keywords

INFRARED RADIATION; PHOTONS; RELIABILITY;

HIGH INTEGRATION DENSITY; LOW POWER CONSUMPTION; PHOTON EMISSION;

CMOS INTEGRATED CIRCUITS;

EID: 33846846694     PISSN: 10003819     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. Shewchun J, Wei L Y. Mechanism for reverse-biased breakdown radiation in p-n junctions[J]. Solid-state Electron, 1965, 8: 485-493.
2. Palestri P, Serra A D, Selmi L, et al. A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors[J]. IEEE Trans Electron Devices, 2002, 49(8): 1427-1435.
3. Lim S Ch, Tan E G. Detection of junction spiking and its induced latch-up by emission microscopy[C]. Reliability Physics Symposium, 1988: 119-125.
4. Tam S, Hu Ch M. Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's[J]. IEEE Trans Electron Devices, 1984, ED-31(9): 1264-1273.
5. Tsuchiya T, Nakajima S. Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's[J]. IEEE Trans Electron Devices, 1985, ED-32(9): 405-412.
6. Wong H S. Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOS-FETs using an overlapping CCD gate structure[J]. IEEE Electron Devices Lett, 1992, 13(8): 389-391.
7. Bude J, Sano N, Yoshii A. Hot-carrier luminescence in Si[J]. Phys Rev B, 1992, 45(11): 5848-5856.
8. Akil N, Kerns S E, Kerns D V. et al. A multimechanism model for photon generation by silicon junctions in avalanche breakdown[J]. IEEE Trans Electron Devices, 1999, 46(5): 1022-1028.
9. Lacaita A L, Zappa F, Bigliardi S, et al. On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices[J]. IEEE Trans Electron Devices, 1993, 40(3): 577-582.
10. Luna N C de, Bailon M F, Tarun A B. Analysis of near-IR photon emissions from 50 nm n-and p-channel Si MOSFETs[J]. IEEE Trans Electron Devices, 2005, 52(6): 1211-1214.
11. CHIM W K. Semiconductor Device and Failure Analysis Using Photon Emission Microscopy[M]. John Wiley and Sons, Inc, 2000.
12. Aoki T, Yoshii A. Analysis of latchup-induced photon emissions[J]. IEEE Trans Electron Devices, 1990, 37(9): 2080-2083.
13. Inuzuka E, Suzuki H. Emission microscopy in semiconductor failure[J]. IEEE IMTC, 1994, 3: 1492-1496.