Current-induced magnetization switching probability in MgO-based magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 43, Issue 2, 2007, Pages 917-919

  Lee, J M ^a   Ye, L X ^a   Weng, M C ^a   Chen, Y C ^a   Su, J P ^a   Wu, Te Ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Current induced magnetization switching (CIMS); Magnetic tunnel junction (MTJ); Switching probability; Tunneling magnetoresistance (TMR)

Indexed keywords

ELECTRIC CURRENTS; MAGNESIA; MAGNETIC MATERIALS; MAGNETIZATION; MAGNETORESISTANCE; SWITCHING;

CURRENT-INDUCED MAGNETIZATION SWITCHING (CIMS); MAGNETIC TUNNEL JUNCTION (MTJ); SWITCHING PROBABILITY; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33846627774     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2006.888507     Document Type: Article

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