Low temperature deposition of TiB2 by inductively coupled plasma assisted CVD

Surface and Coatings Technology

Volumn 201, Issue 9-11 SPEC. ISS., 2007, Pages 5211-5215

  Lee, S H ^a   Nam, K H ^a   Hong, S C ^b   Lee, J J ^a  

^a Seoul National University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

CVD; Inductively coupled plasma; Titanium diboride (TiB2)

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; HARDNESS; LOW TEMPERATURE EFFECTS; SILICON WAFERS; STOICHIOMETRY; TITANIUM COMPOUNDS;

FILM STRUCTURE; TITANIUM DIBORIDE;

INDUCTIVELY COUPLED PLASMA;

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; HARDNESS; INDUCTIVELY COUPLED PLASMA; LOW TEMPERATURE EFFECTS; SILICON WAFERS; STOICHIOMETRY; TITANIUM COMPOUNDS;

EID: 33846615143     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.07.209     Document Type: Article

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