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Volumn 47, Issue 2-3, 2007, Pages 295-301

FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; OPTIMIZATION; SHRINKAGE; STRESS ANALYSIS; VLSI CIRCUITS;

EID: 33846598911     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.09.018     Document Type: Article
Times cited : (5)

References (11)
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    • (1995) MRS Bull , Issue.November , pp. 71-73
    • Flinn, P.1
  • 2
    • 0001038893 scopus 로고    scopus 로고
    • Bands structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys
    • Fischetti M.V. Bands structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys. J Appl Phys 80 4 (1996) 2234-2252
    • (1996) J Appl Phys , vol.80 , Issue.4 , pp. 2234-2252
    • Fischetti, M.V.1
  • 3
    • 33846635339 scopus 로고    scopus 로고
    • See for more details.
  • 4
    • 0031374567 scopus 로고    scopus 로고
    • Three-dimensional finite elements simulation of electro and stress migration effects in interconnect lines
    • Rzepka S. Three-dimensional finite elements simulation of electro and stress migration effects in interconnect lines. MRS Symp Proc 473 (1997) 329-335
    • (1997) MRS Symp Proc , vol.473 , pp. 329-335
    • Rzepka, S.1
  • 5
    • 33846614423 scopus 로고    scopus 로고
    • Huang TC. Numerical modeling and characterization of the stress migration behavior upon various 90 nm Cu/Lowk interconnects. In: IEEE International Interconnect Technology Conference. San Francisco CA; 2003.
  • 6
    • 0029545065 scopus 로고
    • Finite element analysis of electromigration and stress induced diffusion in defromable solids
    • Bower A.F. Finite element analysis of electromigration and stress induced diffusion in defromable solids. MRS Symp Proc 391 (1995) 177-188
    • (1995) MRS Symp Proc , vol.391 , pp. 177-188
    • Bower, A.F.1
  • 7
    • 84976052809 scopus 로고
    • Stress-induced void formation in metal lines
    • Flinn P.A. Stress-induced void formation in metal lines. MRS Bull December (1993) 26-35
    • (1993) MRS Bull , Issue.December , pp. 26-35
    • Flinn, P.A.1
  • 8
    • 0036081971 scopus 로고    scopus 로고
    • Ogawa ET. Stress-induced voiding under vias connected to wide Cu metal leads. In: IEEE, 40th Annual International Reliability Physics Symposium Dallas, Texas; 2002. p. 312-21.
  • 9
    • 0031207626 scopus 로고    scopus 로고
    • Void nucleation in passivated interconnect lines: Effects of site geometries, interfaces, and interface flaws
    • Gleixner R.J. Void nucleation in passivated interconnect lines: Effects of site geometries, interfaces, and interface flaws. MRS J Mater Res 12 8 (1997) 2081-2090
    • (1997) MRS J Mater Res , vol.12 , Issue.8 , pp. 2081-2090
    • Gleixner, R.J.1
  • 10
    • 0022034992 scopus 로고
    • Analysis of cavity nucleation in solids subjected to external and internal stresses
    • Hirth J.P. Analysis of cavity nucleation in solids subjected to external and internal stresses. Acta Metall 33 3 (1985) 359-368
    • (1985) Acta Metall , vol.33 , Issue.3 , pp. 359-368
    • Hirth, J.P.1
  • 11
    • 0032606961 scopus 로고    scopus 로고
    • A physically based model of electromigration and stress-induced void formation in microelectronic interconnects
    • Gleixner R.J. A physically based model of electromigration and stress-induced void formation in microelectronic interconnects. J Appl Phys 86 4 (1999) 1932-1944
    • (1999) J Appl Phys , vol.86 , Issue.4 , pp. 1932-1944
    • Gleixner, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.